翻译成英文：此外比较多种掺杂位置模型发现掺杂效果与活性位点掺杂原子在碳基底上的位置有关边缘型的FeN4P2DC比面内型的FeN4P2的电子给体能力更强边缘型的FeN4P2中P的位置不同对吸附能的影响也有差别中心对称位置引入两个P的模型是最佳的、

Furthermore, various doping position models have revealed that the doping effect is related to the location of the active site/doping atom on the carbon substrate. The edge-type FeN4P2(DC) has a stronger electron-donating ability than the in-plane FeN4P2. The effect of different P positions in edge-type FeN4P2 on the adsorption energy also varies, and the model with two P atoms introduced at the centrally symmetric position is optimal.