This is because Ho:YAG has a narrow absorption peak with a full width at half maximum (FWHM) of only 7nm. As a result, it exhibits a small absorption coefficient when the diode stack is operated at high driving currents.

帮我检查逻辑并按照SCI论文标准润色下面这段话: This is due to HoYAG has a narrow absorption peak with full width at half maximum FWHM of only 7nm so it only has small absorption coefficient when the diode stack working at

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