列出结构体TBMS_PROTECT_SETTING在内存中每个字节的内容ntypedef-struct-n--------USHORT-usWarn;------in-mV-n--------USHORT-usProtect;---in-mV-n--------USHORT-usRECOVERY;--in-mV-n-TBMS_PROTECT_SETTING_VOL;nntypedef-struct-n--------SHORT-sWarn;------in-01Cdegree-n--------

TBMS_PROTECT_SETTING 在内存中每个字节的内容如下：

Byte 0-1: usPROTECT_OptionBits

Byte 2-3: usSVDET_DLYms

Byte 4-7: CUV (usWarn, usProtect, usRECOVERY)

Byte 8-11: TUV (usWarn, usProtect, usRECOVERY)

Byte 12-15: COV (usWarn, usProtect, usRECOVERY)

Byte 16-19: TOV (usWarn, usProtect, usRECOVERY)

Byte 20-21: CHG_CTL (sWarn, sProtect, sRECOVERY)

Byte 22-23: CHG_CTH (sWarn, sProtect, sRECOVERY)

Byte 24-25: DISCHG_CTL (sWarn, sProtect, sRECOVERY)

Byte 26-27: DISCHG_CTH (sWarn, sProtect, sRECOVERY)

Byte 28-29: ETL (sWarn, sProtect, sRECOVERY)

Byte 30-31: ETH (sWarn, sProtect, sRECOVERY)

Byte 32-33: PCBTH (sWarn, sProtect, sRECOVERY)

Byte 34-39: CHG_OC (lChargingOvercurrent1, usChargingOvercurrent1Delay, lChargingOvercurrent2, usChargingOvercurrent2Delay, usChargingOvercurrentRecovery, usNumberOfChargingOvercurrent)

Byte 40-49: DISCHG_OC (lDischargeOvercurrent1, usDischargeOvercurrent1Delay, lDischargeOvercurrent2, usDischargeOvercurrent2Delay, usDischargeOvercurrentRecovery, usNumberOfDischargeOvercurrent, lShortCircuitProtectionCurrent)

Byte 50-55: Other (usEqualizingStartingVoltage, usEqualizingStartupDifferentialPressure, usLowCapacityAlarm, usRecommendedChargingCurrent, usMaximumDischargeCurrent, usRecommendedChargingVoltage)

Byte 56-57: usHOV_THmV

Byte 58-59: usHUV_THmV

Byte 60-61: usShunt_uOhm

Byte 62-63: usHOCC_THA

Byte 64-65: usHODC_THA

Byte 66-67: usHSDC_THA

Byte 68-69: usSOCC_DLYms

Byte 70-71: usSODC_DLYms