Directly In-Band Pumped Ho:YAG System: Challenges for High Power Output

Directly in-band pumped Ho:YAG systems can achieve high overall efficiency, but it remains challenging to achieve high power output. Ho:YAG exhibits a narrow absorption peak with a full width at half maximum (FWHM) of only 7nm, and its absorption coefficient is low when the diode stack operates at high driving current [10]. Additionally, this particular type of LD experiences severe thermal problems and is not yet fully developed, making it unsuitable and costly for use in high power laser systems.

直接带内泵浦的Ho:YAG系统可以实现高整体效率，但对于高功率输出仍然具有挑战性。Ho:YAG具有窄的吸收峰，半峰宽（FWHM）仅为7nm，并且当二极管阵列工作在高驱动电流时，其吸收系数较小[10]。此外，这种特定类型的LD存在严重的热问题，并且尚未完全开发，使其不适合用于高功率激光系统，成本也很高。