The development of high-performance integrated electro-optic modulators capable of operating at low temperatures is imperative for enabling optical interconnects in cryogenic applications. Nevertheless, current integrated modulators are plagued by diminished modulation efficiency or bandwidth when subjected to low temperatures, owing to their reliance on tuning mechanisms that deteriorate as temperature decreases.

High-performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications Existing integrated modulators however suffer from re

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