Graphene’s zero bandgap causes high dark currents in its photodetectors Photodetectors of other 2D materials were normally carried out with the geometry of metal–semiconductor–metal M–S–M which result

The absence of a bandgap in graphene leads to an elevated level of dark currents in its photodetectors. In contrast, photodetectors composed of other two-dimensional (2D) materials have traditionally been fabricated using the metal-semiconductor-metal (M-S-M) geometry, which is associated with low operation bandwidth and high levels of dark current.