The fabricated PDs have exhibited excellent linearity in the power range of 017–196 mW and a high NPDR of 266 × 105 W−1 when operating at 196 μm At the wavelength of 155 μm the present PDs also show e

The power characteristics and linearity of fabricated photodetectors (PDs) were investigated in this study. The PDs demonstrated exceptional linearity within a power range of 0.17-1.96 mW at a wavelength of 1.96 μm, and exhibited a high noise-power-dependent responsivity (NPDR) of 2.66 × 105 W−1. Similarly, at a wavelength of 1.55 μm, the PDs displayed outstanding linearity within a power range of 3 μW to 1.86 mW, limited by the maximum power coupled to the chip, and a high NPDR of 1.63 × 106 W−1. The measured 3 dB bandwidth was found to be approximately 30 GHz and was attributed to the small RC constant, short transit time in silicon, and fast carrier dynamics in the silicon-graphene junction