翻译摘要采用Sentaurus TCAD的sde模块构建了单独的NBTIHCI效应和耦合效应作用下对MOS管阈值电压退化的仿真模型使用sdevice模块对转移特性曲线和阈值电压退化进行仿真分析。研究结果单独NBTI和混合失效同在电压应力为12V温度为200℃条件下在1000s的应力时间下前者导致器件阈值电压退化742后者导致阈值电压退化970这说明了MOS器件阈值电压在两种效应叠加下会使器件阈值电

A simulation model for the degradation of MOSFET threshold voltage under the effects of NBTI, HCI, and their coupling was constructed using the sde module of Sentaurus TCAD. The transfer characteristics curve and threshold voltage degradation were analyzed through simulation using the sdevice module. The study found that under a voltage stress of 1.2V and a temperature of 200℃ for 1000s, NBTI caused a degradation of 7.42% in the threshold voltage, while the mixed failure caused a degradation of 9.70%, indicating that the threshold voltage degradation of MOSFET devices is further aggravated under the combined effects of the two. The study also showed that under a stress time of 1000s, setting the stress voltage to -1.0V or the temperature to 100℃ reduced the threshold voltage degradation rate to 6.91% and 4.83%, respectively, indicating that both voltage and temperature stress are important factors affecting mixed effects