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重写语句更通顺:In particular an optimized PCE exceeding 9 was achieved in a GaAs-hBN-MoS2 device where the MoS2 was depleted with an electrolytic gate

  • 日期: 2024-11-11
  • 标签: 教育

Specifically, a GaAs-hBN-MoS2 device was able to achieve an optimized PCE of over 9% by depleting the MoS2 through an electrolytic gate.

重写语句更通顺:In particular an optimized PCE exceeding 9 was achieved in a GaAs-hBN-MoS2 device where the MoS2 was depleted with an electrolytic gate

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